參數(shù)資料
型號(hào): IXDN414CM
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: 14 Ampere Low-Side Ultrafast MOSFET Drivers
中文描述: 14 A BUF OR INV BASED MOSFET DRIVER, PSFM5
封裝: TO-220, 5 PIN
文件頁數(shù): 3/10頁
文件大小: 241K
代理商: IXDN414CM
3
IXDN414PI / N414CI / N414CM / N414YI / N414YM
IXDI414PI / I414CI / I414CM / I414YI / I414YM
Parameter
Supply Voltage
Value
25V
-0.3V to
VCC + 0.3V
All Other Pins
Power Dissipation
T
CASE
85oC: TO220 (CI), TO263 (YI)
T
CASE
125oC: TO220 (CM), TO263 (YM)
Power Dissipation, T
AMBIENT
25oC
8 Pin PDIP (PI)
TO220 (CI, CM), TO263 (YI, YM)
Derating Factors (to Ambient)
8 Pin PDIP (PI)
TO220 (CI, CM), TO263 (YI, YM)
Storage Temperature
Soldering Lead Temperature
(10 seconds maximum)
Electrical Characteristics
16W
16W
975mW
2W
7.6mW/oC
0.1W/oC
-65oC to 150oC
300oC
Unless otherwise noted, T
= 25
o
C, 4.5V
V
25V
.
All voltage measurements with respect to GND. Device configured as described in
Test Conditions
.
Absolute Maximum Ratings
(Note 1)
Operating Ratings
Parameter
Maximum Junction Temperature
Operating Temperature Range
Thermal Impedance (Junction To Case)
TO220 (CI, CM),
TO263 (YI, YM) (
θ
JC
)
Value
150oC
-40oC to 85oC
0.55oC/W
Symbol
V
IH
V
IL
V
IN
I
IN
Parameter
High input voltage
Low input voltage
Input voltage range
Input current
Test Conditions
0V
V
IN
V
CC
I
OUT
= 10mA, V
CC
= 18V
I
OUT
= 10mA, V
CC
= 18V
Min
3.5
-5
-10
Typ
Max
0.8
V
CC
+ 0.3
10
Units
V
V
V
μ
A
V
OH
V
OL
R
OH
High output voltage
Low output voltage
Output resistance
@ Output high
Output resistance
@ Output Low
Peak output current
V
CC
- 0.025
V
V
0.025
1000
600
m
R
OL
600
1000
m
I
PEAK
V
CC
is 18V
8 Pin Dip (PI)
(Limited by pkg power dissipation)
TO220 (CI), TO263 (YI)
C
L
=15nF Vcc=18V
C
L
=15nF Vcc=18V
C
L
=15nF Vcc=18V
14
A
I
DC
Continuous output
current
Rise time
(1)
Fall time
(1)
On-time propagation
delay
(1)
Off-time propagation
delay
Power supply voltage
Power supply current
3
4
27
25
33
A
A
ns
ns
ns
t
R
t
F
t
ONDLY
22
20
30
t
OFFDLY
C
L
=15nF Vcc=18V
31
34
ns
V
CC
I
CC
V
IN
= 3.5V
V
IN
= 0V
V
IN
= + V
CC
4.5
18
1
0
25
3
10
10
V
mA
μ
A
μ
A
(1)
See Figures 3a and 3b
Note 1:
Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent damage to the device.
Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The
guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may
affect device reliability.
Specifications subject to change without notice
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling
and assembling this component.
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IXDN430 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:30 Amp Low-Side Ultrafast MOSFET / IGBT Driver