參數(shù)資料
型號: ISPLSI1016E-80LT44
廠商: LATTICE SEMICONDUCTOR CORP
元件分類: PLD
英文描述: In-System Programmable High Density PLD
中文描述: EE PLD, 18.5 ns, PQFP44
封裝: TQFP-44
文件頁數(shù): 4/12頁
文件大?。?/td> 150K
代理商: ISPLSI1016E-80LT44
4
Specifications
ispLSI 1016E
Switching Test Conditions
Figure 2. Test Load
DC Electrical Characteristics
Over Recommended Operating Conditions
Input Pulse Levels
Table 2-0003/1016E
Input Rise and Fall Time
10% to 90%
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
GND to 3.0V
-125
-100, -80
1.5V
1.5V
See Figure 2
3-state levels are measured 0.5V from
steady-state active level.
2 ns
3 ns
Output Load Conditions (see Figure 2)
TEST CONDITION
R1
470
470
R2
390
390
390
CL
35pF
35pF
35pF
A
B
Active High
Active Low
Active High to Z
at
V
OH
C
470
390
5pF
390
5pF
Active Low to Z
at
V
OL
Table 2-0004/1016E
+ 5V
R1
R2
CL
*
Device
Output
Test
Point
*
CL includes Test Fixture and Probe Capacitance.
0213a
V
OL
V
OH
I
IL
SYMBOL
1. One output at a time for a maximum duration of one second. V = 0.5V was selected to avoid test problems
by tester ground degradation. Characterized but not 100% tested.
2. Measured using four 16-bit counters.
3. Typical values are at V = 5V and T = 25
°
C.
4. Maximum I varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to estimate
maximum I .
Table 2-0007/1016E
1
I
IH
I
IL-isp
I
IL-PU
I
OS
PARAMETER
2, 4
I
CC
Output Low Voltage
Output High Voltage
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
ispEN Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
I = 8 mA
I = -4 mA
0V
V
V (Max.)
IN
3.5V
V
V
0V
V
V
0V
V
V
V = 5V, V = 0.5V
V = 0.5V, V = 3.0V
f = 1 MHz
IN
CC
IN
IL
IN
IL
CONDITION
MIN.
2.4
TYP.
MAX.
0.4
-10
UNITS
V
V
μ
A
3
90
90
10
-150
-150
-200
μ
A
μ
A
μ
A
mA
mA
mA
Commercial
Industrial
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