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參數(shù)資料
| 型號(hào)： | ISL6609CRZ-T |
| 廠(chǎng)商： | INTERSIL CORP |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | Synchronous Rectified MOSFET Driver |
| 中文描述： | 4 A AND GATE BASED MOSFET DRIVER, PQCC8 |
| 封裝： | 3 X 3 MM, ROHS COMPLIANT, PLASTIC, MO-220VEEC, QFN-8 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 321K |
| 代理商： | ISL6609CRZ-T |
1
FN9221.0
ISL6609, ISL6609A
Synchronous Rectified MOSFET Driver
The ISL6609, ISL6609A is a high frequency, MOSFET driver
optimized to drive two N-Channel power MOSFETs in a
synchronous-rectified buck converter topology. This driver
combined with an Intersil ISL63xx or ISL65xx multiphase
PWM controller forms a complete single-stage core-voltage
regulator solution with high efficiency performance at high
switching frequency for advanced microprocessors.
The IC is biased by a single low voltage supply (5V),
minimizing driver switching losses in high MOSFET gate
capacitance and high switching frequency applications.
Each driver is capable of driving a 3nF load with less than
10ns rise/fall time. Bootstrapping of the upper gate driver is
implemented via an internal low forward drop diode,
reducing implementation cost, complexity, and allowing the
use of higher performance, cost effective N-Channel
MOSFETs. Adaptive shoot-through protection is integrated
to prevent both MOSFETs from conducting simultaneously.
The ISL6609, ISL6609A features 4A typical sink current for
the lower gate driver, enhancing the lower MOSFET gate
hold-down capability during PHASE node rising edge,
preventing power loss caused by the self turn-on of the lower
MOSFET due to the high dV/dt of the switching node.
The ISL6609, ISL6609A also features an input that
recognizes a high-impedance state, working together with
Intersil multiphase PWM controllers to prevent negative
transients on the controlled output voltage when operation is
suspended. This feature eliminates the need for the schottky
diode that may be utilized in a power system to protect the
load from negative output voltage damage. In addition, the
ISL6609A’s bootstrap function is designed to prevent the
BOOT capacitor from overcharging, should excessively large
negative swings occur at the transitions of the PHASE node.
Features
Drives Two N-Channel MOSFETs
Adaptive Shoot-Through Protection
0.4
On-Resistance and 4A Sink Current Capability
Supports High Switching Frequency
- Fast Output Rise and Fall
- Ultra Low Three-State Hold-Off Time (20ns)
ISL6605 Replacement with Enhanced Performance
BOOT Capacitor Overcharge Prevention (ISL6609A)
Low V
F
Internal Bootstrap Diode
Low Bias Supply Current
Enable Input and Power-On Reset
QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat
No Leads-Product Outline
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
Core Voltage Supplies for Intel and AMD
Microprocessors
High Frequency Low Profile High Efficiency DC/DC
Converters
High Current Low Voltage DC/DC Converters
Synchronous Rectification for Isolated Power Supplies
Related Literature
Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Ordering Information
PART NUMBER
(Note)
TEMP.
RANGE (°C)
PACKAGE
(Pb-Free)
PKG.
DWG. #
ISL6609CBZ
0 to 70
8 Ld SOIC
M8.15
ISL6609CRZ
0 to 70
8 Ld 3x3 QFN
L8.3x3
ISL6609ACBZ
0 to 70
8 Ld SOIC
M8.15
ISL6609ACRZ
0 to 70
8 Ld 3x3 QFN
L8.3x3
Add “-T” suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
Data Sheet
August 10, 2005
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2005. All Rights Reserved. Intel is a registered trademark of Intel Corporation.
AMD is a registered trademark of Advanced Micro Devices, Inc.
All other trademarks mentioned are the property of their respective owners.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ISL6609ACBZ | 30V N-Channel PowerTrench MOSFET |
| ISL6609ACBZ-T | Synchronous Rectified MOSFET Driver |
| ISL6609ACRZ | 7-Bit Bus Interfaces With 3-State Outputs 20-SOIC 0 to 70 |
| ISL6609ACRZ-T | 7-Bit Bus Interfaces With 3-State Outputs 20-SOIC 0 to 70 |
| ISL6609CBZ | Synchronous Rectified MOSFET Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6609IBZ | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類(lèi)型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱(chēng):835-1063 |
| ISL6609IBZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類(lèi)型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱(chēng):835-1063 |
| ISL6609IR | 制造商:Intersil Corporation 功能描述:MOSFET DRVR 4A 2-OUT HI/LO SIDE INV/NON-INV 8QFN EP - Rail/Tube |
| ISL6609IR-T | 制造商:Intersil Corporation 功能描述:MOSFET DRVR 4A 2-OUT HI/LO SIDE INV/NON-INV 8QFN EP - Bulk |
| ISL6609IRZ | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類(lèi)型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱(chēng):835-1063 |
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