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參數(shù)資料
| 型號： | ISL6526AIBZ |
| 廠商： | INTERSIL CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | Single Synchronous Buck Pulse-Width Modulation (PWM) Controller |
| 中文描述： | 2 A SWITCHING CONTROLLER, 640 kHz SWITCHING FREQ-MAX, PDSO14 |
| 封裝： | ROHS COMPLIANT, PLASTIC, MS-012-AB, SOIC-14 |
| 文件頁數(shù)： | 13/15頁 |
| 文件大小： | 340K |
| 代理商： | ISL6526AIBZ |
13
FN9055.8
March 20, 2007
ends when the upper MOSFET is turned on again, which
varies depending on the switching frequency and duty cycle.
The minimum bootstrap capacitance can be calculated by
rearranging the previous equation and solving for C
BOOT
.
Q
BOOT1
BOOT2
Typical gate charge values for MOSFETs considered in
these types of applications range from 20 to 100nC. Since
the voltage drop across Q
LOWER
is negligible, V
BOOT1
is
simply V
CPVOUT
- V
D
. A schottky diode is recommended to
minimize the voltage drop across the bootstrap capacitor
during the on-time of the upper MOSFET. Initial calculations
with V
BOOT2
no less than 4V will quickly help narrow the
bootstrap capacitor range.
For example, consider an upper MOSFET is chosen with a
maximum gate charge, Q
g
, of 100nC. Limiting the voltage
drop across the bootstrap capacitor to 1V results in a value
of no less than 0.1
μ
F. The tolerance of the ceramic capacitor
should also be considered when selecting the final bootstrap
capacitance value.
A fast recovery diode is recommended when selecting a
bootstrap diode to reduce the impact of reverse recovery
charge loss. Otherwise, the recovery charge, Q
RR
, would
have to be added to the gate charge of the MOSFET and
taken into consideration when calculating the minimum
bootstrap capacitance.
ISL6526, ISL6526A DC/DC Converter
Application Circuit
Figure 8 shows an application circuit of a DC/DC Converter.
Detailed information on the circuit, including a complete Bill-
of-Materials and circuit board description, can be found in
Application Note AN9994.
C
BOOT
V
–
V
=
(EQ. 11)
Component Selection Notes:
C
3,8,9
- Each 150
μ
F, Panasonic EEF-UE0J151R or Equivalent.
D1 - 30mA Schottky Diode, MA732 or Equivalent
L
1
- 1
μ
H Inductor, Panasonic P/N ETQ-P6F1ROSFA or Equivalent.
Q
1
- Fairchild MOSFET; ITF86110DK8.
2.5V @ 5A
FB
COMP
UGATE
PHASE
BOOT
GND
LGATE
ISL6526, ISL6526A
R
3
R
5
1.07k
Ω
C
10
C
11
R
2
L
1
D
1
C
7
C
1
0.1
μ
F
C
4
C
6
1
μ
F
C
8,9
OCSET
CPVOUT
C
3
R
1
Q
1
CT1
CT2
CPGND
VCC
3.3V
C
5
10
μ
F
CERAMIC
C
2
C
12
R
4
GND
U
1
GND
14
1
2
3
4
5
8
6
7
9
10
11
12
13
TP
1
TP
3
ENABLE
9.76k
Ω
6.49k
Ω
2.26k
Ω
124
Ω
1000pF
0.22
μ
F
0.1
μ
F
33pF
5600pF
8200pF
ENABLE
FIGURE 8. 3.3V TO 2.5V 5A DC/DC CONVERTER
ISL6526, ISL6526A
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6526AIR | 功能描述:電壓模式 PWM 控制器 Single Synch Buck RoHS:否 制造商:Texas Instruments 輸出端數(shù)量:1 拓撲結構:Buck 輸出電壓:34 V 輸出電流: 開關頻率: 工作電源電壓:4.5 V to 5.5 V 電源電流:600 uA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 封裝 / 箱體:WSON-8 封裝:Reel |
| ISL6526AIR-T | 功能描述:IC REG CTRLR BUCK PWM VM 16-QFN RoHS:否 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 標準包裝:4,000 系列:- PWM 型:電壓模式 輸出數(shù):1 頻率 - 最大:1.5MHz 占空比:66.7% 電源電壓:4.75 V ~ 5.25 V 降壓:是 升壓:無 回掃:無 反相:無 倍增器:無 除法器:無 Cuk:無 隔離:無 工作溫度:-40°C ~ 85°C 封裝/外殼:40-VFQFN 裸露焊盤 包裝:帶卷 (TR) |
| ISL6526AIRZ | 功能描述:電壓模式 PWM 控制器 600KHZ SNG PWM W/CHA RGE PUMP 16LD 5X5 RoHS:否 制造商:Texas Instruments 輸出端數(shù)量:1 拓撲結構:Buck 輸出電壓:34 V 輸出電流: 開關頻率: 工作電源電壓:4.5 V to 5.5 V 電源電流:600 uA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 封裝 / 箱體:WSON-8 封裝:Reel |
| ISL6526AIRZ-T | 功能描述:電壓模式 PWM 控制器 600KHZ SINGLE PWM W/CHRG PUMP 16LD 5X5 RoHS:否 制造商:Texas Instruments 輸出端數(shù)量:1 拓撲結構:Buck 輸出電壓:34 V 輸出電流: 開關頻率: 工作電源電壓:4.5 V to 5.5 V 電源電流:600 uA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 封裝 / 箱體:WSON-8 封裝:Reel |
| ISL6526AIRZ-TK | 功能描述:IC REG CTRLR BUCK PWM VM 16-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 產品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:2,500 系列:- PWM 型:電流模式 輸出數(shù):1 頻率 - 最大:275kHz 占空比:50% 電源電壓:18 V ~ 110 V 降壓:無 升壓:無 回掃:無 反相:無 倍增器:無 除法器:無 Cuk:無 隔離:是 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 包裝:帶卷 (TR) |
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