參數(shù)資料
型號(hào): ISL6444
廠商: Intersil Corporation
英文描述: Dual PWM Controller with DDR Memory Option for Gateway Applications(帶DDR存儲(chǔ)器選項(xiàng)的網(wǎng)關(guān)專用雙PWM控制器)
中文描述: 雙PWM控制器的DDR網(wǎng)關(guān)應(yīng)用(帶的DDR存儲(chǔ)器選項(xiàng)的網(wǎng)關(guān)專用雙脈寬調(diào)制控制器內(nèi)存選項(xiàng))
文件頁(yè)數(shù): 5/19頁(yè)
文件大?。?/td> 372K
代理商: ISL6444
5
FN9069.3
April 12, 2007
Undervoltage Shut-Down Level
V
UVL
Fraction of the set point; ~2
μ
s noise filter
70
-
85
%
Overvoltage Shut-Down
V
OVP1
Fraction of the set point; ~2
μ
s noise filter
110
-
130
%
GATE DRIVERS
Upper Drive Pull-Up Resistance
R
2UGPUP
V
CC
= 4.5V
-
8
15
Ω
Upper Drive Pull-Down Resistance
R
2UGPDN
V
CC
= 4.5V
-
3.2
5
Ω
Lower Drive Pull-Up Resistance
R
2LGPUP
V
CC
= 4.5V
-
8
15
Ω
Lower Drive Pull-Down Resistance
R
2LGPDN
V
CC
= 4.5V
-
1.8
3
Ω
POWER GOOD AND CONTROL FUNCTIONS
Power Good Lower Threshold
V
PG-
Fraction of the set point; ~3
μ
s noise filter
-13
-
-7
%
Power Good Higher Threshold
V
PG+
Fraction of the set point; ~3
μ
s noise filter.
Guaranteed by characterization.
12
-
16
%
PGOODx Leakage Current
I
PGLKG
V
PULLUP
= 5.5V
-
-
1
μ
A
PGOODx Voltage Low
V
PGOOD
I
PGOOD
= -4mA
-
0.5
0.85
V
EN - Low (Off)
-
-
0.8
V
EN - High (On)
2.5
-
-
V
CCM Enforced (Hysteretic Operation
Inhibited)
VOUTX pulled low
-
-
0.1
V
Automatic CCM/Hysteretic Operation Enabled
VOUTX connected to the output
0.9
-
-
V
DDR - Low (Off)
-
-
0.8
V
DDR - High (On)
2.5
-
-
V
DDR REF Output Voltage
V
DDREF
DDR = 1, I
REF
= 0...10mA
0.99*
V
OC2
V
OC2
1.01*
V
OC2
V
DDR REF Output Current
I
DDREF
DDR = 1. Guaranteed by characterization.
-
10
16
mA
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted.
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ISL6444
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