
10
FN6459.3
October 19, 2009
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND
TRANSISTOR COUNT:
57
PROCESS:
Submicron CMOS
FIGURE 15. OFF ISOLATION
FIGURE 16. CHARGE INJECTION vs SWITCH
VOLTAGE
Typical Performance Curves T
A = +25°C, Unless Otherwise Specified (Continued)
FREQUENCY (Hz)
1k
100k
1M
100M 500M
10k
10M
-120
-20
-40
-60
-80
-100
C
R
OS
S
T
ALK
(
d
B)
O
F
IS
OLA
T
ION
(dB
)
ISOLATION
V+ = 1.8V to 5.5V
0
-120
-20
-40
-60
-80
-100
0
012
345
-60
-40
-20
0
10
30
40
Q
(
p
C)
VCOM (V)
V+ = 3.0V
V+ = 5V
V+ = 1.8V
-50
-30
-10
20
V+ = 3.0V
ISL54051, ISL54052