Voltage on VDD
參數(shù)資料
型號(hào)： ISL12008IB8Z
廠商： Intersil
文件頁(yè)數(shù)： 13/19頁(yè)
文件大?。?/td> 0K
描述： IC RTC I2C LO-POWER 8-SOIC
標(biāo)準(zhǔn)包裝： 980
類型： 時(shí)鐘/日歷
特點(diǎn)： 警報(bào)器，閏年
時(shí)間格式： HH:MM:SS:hh（24 小時(shí)）
數(shù)據(jù)格式： YY-MM-DD-dd
接口： I²C，2 線串口
電源電壓： 2.7 V ~ 5.5 V
電壓 - 電源，電池： 1.8 V ~ 5.5 V
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 8-SOIC
包裝： 管件
3
FN6690.1
September 26, 2008
Absolute Maximum Ratings
Thermal Information
Voltage on VDD, VBAT, SCL, SDA, and FT/OUT Pins
(Respect to GND). . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 6.5V
Voltage on X1 and X2 Pins
(Respect to GND)
VDD Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD + 0.5
VBAT Mode . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VBAT + 0.5
Thermal Resistance (Typical, Note 1)
θJA (°C/W)
8 Lead SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
115
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTE:
1.
θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
DC Operating Characteristics – RTC Temperature = -40°C to +85°C. Recommended Operating Conditions, unless
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN
(Note 8)
TYP
(Note 5)
MAX
(Note 8)
UNITS
NOTES
VDD
Main Power Supply
2.7
5.5
V
VBAT
Battery Supply Voltage
1.8
5.5
V
IDD1
Supply Current
VDD = 5V
2.8
6
A
VDD = 3V
1.6
4
A
IDD2
Supply Current With I2C Active
VDD = 5V
40
120
A
IDD3
Supply Current (Low Power Mode)
VDD = 5V, LPMODE = 1
2.3
5
A
IBAT
Battery Supply Current
VBAT = 3V, +25°C
800
950
nA
ILI
Input Leakage Current on SCL
-1
0.1
+1
A
ILO
I/O Leakage Current on SDA
-1
0.1
+1
A
VTRIP
VBAT Mode Threshold
2.3
2.6
2.9
V
VTRIPHYS
VTRIP Hysteresis
36
mV
VBATHYS
VBAT Hysteresis
53
mV
FT/OUT
VOL
Output Low Voltage
VDD = 5V
IOL = 3mA
0.02
0.4
V
VDD = 2.7V
IOL = 1mA
0.02
0.4
V
Power-Down Timing
Temperature = -40°C to +85°C. Recommended Operating Conditions unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN
(Note 8)
TYP
(Note 5)
MAX
(Note 8)
UNITS
NOTES
VDD SR-
VDD Negative Slewrate
5V/ms
Serial Interface Specifications
Recommended Operating Conditions. Unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
(Note 8)
TYP
(Note 5)
MAX
(Note 8)
UNITS NOTES
SERIAL INTERFACE SPECS
VIL
SDA and SCL Input Buffer LOW Voltage
-0.3
0.3 x VDD
V
VIH
SDA and SCL Input Buffer HIGH Voltage
0.7 x VDD
VDD + 0.3
V
Hysteresis SDA and SCL Input Buffer Hysteresis
0.05 x
VDD
VOL
SDA Output Buffer LOW Voltage, Sinking 3mA
0
0.02
0.4
V
Cpin
SDA and SCL Pin Capacitance
TA = +25°C, f = 1MHz, VDD = 5V,
VIN =0V, VOUT = 0V
10
pF
ISL12008
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