參數(shù)資料
型號： IS61LPS102418A
廠商： Integrated Silicon Solution, Inc.
英文描述： 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
中文描述： 256 × 72，為512k × 36，1024K × 18 18MB的同步流水線，單周期取消選擇靜態(tài)RAM
文件頁數(shù)： 5/34頁
文件大?。?/td> 229K
代理商： IS61LPS102418A
Integrated Silicon Solution, Inc. — 1-800-379-4774
13
Rev. D
02/11/05
IS61VPS25672A,IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
ISSI
INTERLEAVED BURST ADDRESS TABLE (MODE = VDD or No Connect)
External Address
1st Burst Address
2nd Burst Address
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = VSS)
0,0
1,0
0,1
A1', A0' = 1,1
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
TSTG
Storage Temperature
–55 to +150
°C
PD
Power Dissipation
1.6
W
IOUT
Output Current (per I/O)
100
mA
VIN, VOUT Voltage Relative to Vss for I/O Pins
–0.5 to VDDQ + 0.5
V
VIN
Voltage Relative to Vss for
–0.5 to VDD + 0.5
V
for Address and Control Inputs
VDD
Voltage on VDD Supply Relative to Vss
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or
electric fields; however, precautions may be taken to avoid application of any voltage higher than
maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
相關(guān)PDF資料
PDF描述
IS61LPS12832A-200B2I 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12832A-200B3 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12832A-200B3I 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12832A-200TQ 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12832A-200TQI 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LPS102418A-200B2 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS102418A-200B2I 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS102418A-200B3 功能描述:靜態(tài)隨機存取存儲器 18Mb,Pipeline,Sync,1Mb x 18,200MHz,3.3V or 2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LPS102418A-200B3I 功能描述:靜態(tài)隨機存取存儲器 18Mb,Pipeline,Sync,1Mb x 18,200MHz,3.3V or 2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LPS102418A-200B3I-TR 功能描述:靜態(tài)隨機存取存儲器 18Mb,Pipeline,Sync,1Mb x 18,200MHz,3.3V or 2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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