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參數(shù)資料
| 型號： | IS61LF51218D-8.5TQ |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | SRAM |
| 英文描述： | 512K X 18 CACHE SRAM, 8.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 3/21頁 |
| 文件大?。?/td> | 148K |
| 代理商： | IS61LF51218D-8.5TQ |
Integrated Silicon Solution, Inc. — 1-800-379-4774
11
PRELIMINARY INFORMATION
Rev. 00A
04/17/01
IS61SF25632T/D
IS61LF25632T/D
IS61SF25636T/D
IS61LF25636T/D
IS61SF51218T/D
IS61LF51218T/D
ISSI
OPERATING RANGE
Range
Ambient Temperature
VCC
VCCQ
Commercial
0°C to +70°C
3.3V,
+10%, –5%
2.375
–3.6V
Industrial
–40°C to +85°C
3.3V,
+10%, –5%
2.375
–3.6V
DC ELECTRICAL CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
IOH = –2.0 mA, VCCQ = 2.5V
1.7
—
V
IOH = –4.0 mA, VCCQ = 3.3V
2.4
—
V
VOL
Output LOW Voltage
IOL = 2.0 mA, VCCQ = 2.5V
—
0.7
V
IOL = 8.0 mA, VCCQ = 3.3V
—
0.4
V
VIH
Input HIGH Voltage
VCCQ = 2.5V
1.7
VCCQ + 0.3
V
VCCQ = 3.3V
2.0
VCCQ + 0.3
V
VIL
Input LOW Voltage
VCCQ = 2.5V
–0.3
0.7
V
VCCQ = 3.3V
–0.3
0.8
V
ILI
Input Leakage Current
GND
≤ VIN ≤ VCCQ(2)
Com.
–22
A
Ind.
–55
ILO
Output Leakage Current
GND
≤ VOUT ≤ VCCQ, OE = VIH Com.
–22
A
Ind.
–55
POWER SUPPLY CHARACTERISTICS (Over Operating Range)
-8*
-8.5
-9
-10
Symbol Parameter
Test Conditions
Max.
Unit
ICC
AC Operating
Device Selected,
Com.
400
370
350
300
mA
Supply Current
All Inputs = VIL or VIH
Ind.
—
400
380
330
mA
OE = VIH, Vcc = Max.
Cycle Time
≥ tKC min.
ISB
Standby Current
Device Deselected,
Com.
110
105
90
80
mA
VCC = Max.,
Ind.
—
110
95
85
mA
All Inputs = VIH or VIL
CLK Cycle Time
≥ tKC min.
*This speed available only in SF version
Notes:
1. The MODE pin has an internal pullup. This pin may be a No Connect, tied to GND, or tied to VCC.
2. The MODE pin should be tied to Vcc or GND. It exhibits ±10 A maximum leakage current when tied to - GND + 0.2V
or
≥ Vcc – 0.2V.
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| IS61LPD25636A-200B2 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200B2I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200B3 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
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| IS61LPD25636A-200TQ | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LF51236A | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51236A-6.5B2 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51236A-6.5B2I | 功能描述:靜態(tài)隨機(jī)存取存儲器 18M (512Kx36) 6.5ns Sync 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LF51236A-6.5B2I-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 18M (512Kx36) 6.5ns Sync 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LF51236A-6.5B2LI | 功能描述:靜態(tài)隨機(jī)存取存儲器 18M (512Kx36) 6.5ns Sync 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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