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參數(shù)資料
| 型號(hào)： | IS42LS16800A-10B |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16Meg × 8，8Meg x16 |
| 文件頁數(shù)： | 52/66頁 |
| 文件大?。?/td> | 556K |
| 代理商： | IS42LS16800A-10B |
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ISSI
56
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
ADVANCEDINFORMATION
Rev. 00A
06/01/02
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQ
T0
T1
T2
T3
T4
T5
T6
T7
NOP
DIN a
DIN a+1
DOUT b
DOUT b+1
BANK n,
COL a
BANK m,
COL b
CAS Latency - 3 (BANK m)
tRP - BANK n
tRP -BANKm
WRITE - AP
BANK n
READ - AP
BANK m
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back
Precharge
Page Active
READ with Burst of 4
Precharge
Internal States
tWR - BANK n
DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQ
T0
T1
T2
T3
T4
T5
T6
T7
NOP
BANK n,
COL a
BANK m,
COL b
tRP - BANK n
tRP -BANKm
WRITE - AP
BANK n
WRITE - AP
BANK m
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back
Precharge
Page Active
WRITE with Burst of 4
Write-Back
Internal States
tWR - BANK n
DIN a
DIN a+1
DIN a+2
DIN b
DIN b+1
DIN b+2
DIN b+3
WRITE with Auto Precharge
3. Interrupted by a READ (with or without auto precharge):
A READ to bank m will interrupt a WRITE on bank n when
registered, with the data-out appearing (CASlatency) later.
The PRECHARGE to bank n will begin after tWR is met,
where tWR begins when the READ to bank m is registered.
The last valid WRITE to bank n will be data-in registered one
clock prior to the READ to bank m.
4. Interrupted by a WRITE (with or without auto precharge):
AWRITE to bank m will interrupt a WRITE on bank n when
registered. The PRECHARGE to bank n will begin after tWR
is met, where tWR begins when the WRITE to bank m is
registered. The last valid data WRITE to bank n will be data
registered one clock prior to a WRITE to bank m.
WRITE With Auto Precharge interrupted by a READ
WRITE With Auto Precharge interrupted by a WRITE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42LS16800A-10BI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600A-7T | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600A-7TI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS61LF51218D-8.5TQ | 512K X 18 CACHE SRAM, 8.5 ns, PQFP100 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42LS16800A-10BI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS16800A-10T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS16800A-10TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS16800A-7B | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS16800A-7BI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
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