參數(shù)資料
型號(hào)： IRS2336DPBF
廠商： International Rectifier
英文描述： HIGH VOLTAGE 3 PHASE GATE DRIVER IC
中文描述： 3相高壓柵極驅(qū)動(dòng)器集成電路
文件頁(yè)數(shù)： 22/45頁(yè)
文件大?。?/td> 952K
代理商： IRS2336DPBF
IRS2336xD Family
www.irf.com
2007 International Rectifier
22
Undervoltage Lockout Protection
This family of ICs provides undervoltage lockout protection on both the V
CC
(logic and low-side circuitry) power
supply and the V
BS
(high-side circuitry) power supply. Figure 9 is used to illustrate this concept; V
CC
(or V
BS
) is
plotted over time and as the waveform crosses the UVLO threshold (V
CCUV+/-
or V
BSUV+/-
) the undervoltage protection
is enabled or disabled.
Upon power-up, should the V
CC
voltage fail to reach the V
CCUV+
threshold, the IC will not turn-on. Additionally, if the
V
CC
voltage decreases below the V
CCUV-
threshold during operation, the undervoltage lockout circuitry will recognize
a fault condition and shutdown the high- and low-side gate drive outputs, and the FAULT pin will transition to the low
state to inform the controller of the fault condition.
Upon power-up, should the V
BS
voltage fail to reach the V
BSUV
threshold, the IC will not turn-on. Additionally, if the
V
BS
voltage decreases below the V
BSUV
threshold during operation, the undervoltage lockout circuitry will recognize a
fault condition, and shutdown the high-side gate drive outputs of the IC.
The UVLO protection ensures that the IC drives the external power devices only when the gate supply voltage is
sufficient to fully enhance the power devices. Without this feature, the gates of the external power switch could be
driven with a low voltage, resulting in the power switch conducting current while the channel impedance is high; this
could result in very high conduction losses within the power device and could lead to power device failure.
Figure 9: UVLO protection
Shoot-Through Protection
The IRS2336xD family of high-voltage ICs is equipped with shoot-through protection circuitry (also known as cross-
conduction prevention circuitry). Figure 10 shows how this protection circuitry prevents both the high- and low-side
switches from conducting at the same time. Table 1 illustrates the input/output relationship of the devices in the form
of a truth table. Note that the IRS2336D has inverting inputs (the output is out-of-phase with its respective input)
while the IRS23364D has non-inverting inputs (the output is in-phase with its respective input).
相關(guān)PDF資料
PDF描述
IRS2336DSPBF HIGH VOLTAGE 3 PHASE GATE DRIVER IC
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IRU3038 RES CHIP 383OHM 1/10 1% 100PP
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRS2336DSPBF 功能描述:功率驅(qū)動(dòng)器IC 3-Phase Gate DRVR 600V 200mA 275ns RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2336DSTRPBF 功能描述:功率驅(qū)動(dòng)器IC 600V 3Phs Drvr IC w/Intgr BSF & Prot RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2336JPBF 功能描述:功率驅(qū)動(dòng)器IC 3-Phase Gate DRVR 600V 200mA 275ns RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2336JTRPBF 功能描述:功率驅(qū)動(dòng)器IC 600V 3Phs Drvr IC w/ Prot w/out iBSF RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2336PBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:HIGH VOLTAGE 3 PHASE GATE DRIVER IC
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