參數資料
型號: IRS2153
廠商: International Rectifier
英文描述: Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status:   Remarks:  
中文描述: 自激式半橋驅動器集成電路
文件頁數: 3/14頁
文件大?。?/td> 345K
代理商: IRS2153
3
IRS2153(1)D
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Parameter
Symbol
Definition
V
BS
High side floating supply voltage
Min.
V
CC
- 0.7
Max.
V
CLAMP
Units
V
S
Steady state side floating supply offset voltage
-3.0 (Note 2)
600
V
CC
Supply voltage
V
CCUV+
+0.1 V
V
CC CLAMP
5
V
I
CC
Supply current
(Note 3)
mA
T
J
Junction temperature
-40
125
oC
Note 2:
It is recommended to avoid output switching conditions where the negative-going spikes at the V
S
node would decrease V
S
below ground by more than -5 V.
Note 3:
Enough current should be supplied to the V
CC
pin of the IC to keep the internal 15.6 V zener diode
clamping the voltage at this pin.
Recommended Component Values
Parameter
Component
Symbol
R
T
Min.
1
Max.
---
Units
k
pF
Timing resistor value
C
T
C
T
pin capacitor value
330
---
V
BIAS
(V
CC
, V
BS
)
= 14 V, V
S
=0 V and T
A
= 25 °C, CLO = CHO = 1 nF.
Frequency vs. RT
10
100
1,000
10,000
100,000
1,000,000
1,000
10,000
100,000
1,000,000
RT (Ohm)
F
330pf
470pF
1nF
2.2nF
4.7nF
10nF
CT Values
For further information, see Fig. 12.
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