參數(shù)資料
型號(hào)： IRS2153
廠商： International Rectifier
英文描述： Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status:   Remarks:  
中文描述： 自激式半橋驅(qū)動(dòng)器集成電路
文件頁數(shù)： 2/14頁
文件大?。?/td> 345K
代理商： IRS2153
2
IRS2153(1)D
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions.
Parameter
Symbol
Definition
V
B
High side floating supply voltage
Min.
-0.3
Max.
625
Units
V
S
High side floating supply offset voltage
V
B
- 25
V
B
+ 0.3
V
HO
High side floating output voltage
V
S
– 0.3
V
B
+ 0.3
V
Low side output voltage
-0.3
V
CC
+ 0.3
V
I
RT
R
T
pin current
-5
5
mA
V
RT
R
T
pin voltage
-0.3
V
CC
+ 0.3
V
CT
C
T
pin voltage
-0.3
V
CC
+ 0.3
V
I
CC
Supply current (Note 1)
Maximum allowable current at LO and HO due to external
power transistor Miller effect.
Allowable offset voltage slew rate
Maximum power dissipation @ T
A
≤
+25 oC, 8-Pin DIP
Maximum power dissipation @ T
A
≤
+25 oC, 8-Pin SOIC
---
20
I
OMAX
-500
500
mA
dV
S
/dt
P
D
-50
50
V/ns
---
1.0
P
D
---
0.625
W
R
thJA
Thermal resistance, junction to ambient, 8-Pin DIP
---
85
R
thJA
Thermal resistance, junction to ambient, 8-Pin SOIC
---
128
oC/W
T
J
Junction temperature
-55
150
T
S
Storage temperature
-55
150
T
L
Lead temperature (soldering, 10 seconds)
---
300
oC
Note 1:
This IC contains a zener clamp structure between the chip V
CC
and COM which has a nominal
breakdown voltage of 15.4 V. Please note that this supply pin should not be driven by a DC, low
impedance power source greater than the V
CLAMP
specified in the Electrical Characteristics section.
相關(guān)PDF資料
PDF描述
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IRS21531DPbF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status:   Remarks:  
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRS21531DPBF 功能描述:功率驅(qū)動(dòng)器IC Self-Osc Half Bridge Drvr 1.1us RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS21531DSPbF 功能描述:功率驅(qū)動(dòng)器IC SELF-OSCILLATING HALF BRDG DRVR 600V RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS21531DSTRPBF 功能描述:功率驅(qū)動(dòng)器IC Self-Osc Half Bridge Drvr 1.1us RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2153D 制造商:IRF 制造商全稱:International Rectifier 功能描述:SELF-OSCILLATING HALF-BRIDEGE DRIVER IC
IRS2153DPBF 功能描述:功率驅(qū)動(dòng)器IC Self-Osc Half Bridge Drvr 1.1us RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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