參數(shù)資料
型號: IRS212PBF
廠商: International Rectifier
英文描述: Asynchronous SRAM; Organization (word): 512K; Organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (36); Status:   Remarks:  
中文描述: 電流傳感單通道驅(qū)動
文件頁數(shù): 12/21頁
文件大?。?/td> 372K
代理商: IRS212PBF
IRS212(7, 71, 8, 81)(S)PbF
www.irf.com
12
Typ
Max
0
0.05
0.1
0.15
0.2
0.25
0.3
-50
-25
0
25
50
75
100
125
Temperature (°C)
H
i
g
h
e
v
e
l
u
p
u
t
I
O
A
V
Figure
16
A. High Level Output (I
O
= 2 mA)
vs. Temperature
Typ
Max
0
0.05
0.1
0.15
0.2
0.25
10
12
14
16
18
20
Supply Voltage (V)
H
O
A
Figure
16
B. High Level Output (I
O
= 2 mA) vs.
Voltage
Typ
Max
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
-50
-25
0
25
50
75
100
125
Temperature (°C)
L
O
A
V
)
Figure
17
A. Low Level Output (I
O
= 2 mA)
vs. Temperature
Typ
Max
0
0.02
0.04
0.06
0.08
0.1
0.12
10
12
14
16
18
20
Supply Voltage (V)
L
O
A
Figure
17
B. Low Level Output (I
O
= 2 mA) vs.
Voltage
相關(guān)PDF資料
PDF描述
IRS21271PbF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status:   Remarks:  
IRS21271SPbF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  
IRS2127PbF CURRENT SENSING SINGLE CHANNEL DRIVER
IRS2127SPbF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  
IRS21281PbF Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status:   Remarks:  
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