參數(shù)資料
型號(hào): IRS2118SPbF
廠商: International Rectifier
英文描述: Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status:   Remarks:  
中文描述: 單信道驅(qū)動(dòng)器
文件頁數(shù): 13/19頁
文件大小: 371K
代理商: IRS2118SPBF
IRS2117/IRS2118(S)PbF
www.irf.com
13
Figure 1
8
. V
cc
Undervoltage Threshold (+)
vs. Temperature
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
Temperature (
o
C)
V
c
c
u
p
p
l
y
u
r
r
e
n
t
μ
A
Max.
Typ.
Min.
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
Temperature (
o
C)
V
c
c
u
p
p
l
y
u
r
r
e
n
t
μ
A
Typ.
Figure 1
9
. V
cc
Undervoltage Threshold (-)
vs. Temperature
Max
Min.
Max
0
1
2
3
4
5
6
-50
-25
0
25
50
75
100
125
Temperature (°C)
L
Figure 1
7
A. Logic "0" Input Bias Current
vs. Temperature
Max
0
1
2
3
4
5
6
10
12
14
16
18
20
Supply Voltage (V)
L
Figure 1
7
B. Logic "0" Input Bias Current
vs. Voltage
相關(guān)PDF資料
PDF描述
IRS2117SPbF SINGLE CHANNEL DRIVER
IRS212PBF Asynchronous SRAM; Organization (word): 512K; Organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (36); Status:   Remarks:  
IRS21271PbF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status:   Remarks:  
IRS21271SPbF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  
IRS2127PbF CURRENT SENSING SINGLE CHANNEL DRIVER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRS2118SPBF 制造商:International Rectifier 功能描述:MOSFET Driver IC
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