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參數(shù)資料
| 型號： | IRLU4343PBF |
| 元件分類： | JFETs |
| 英文描述： | 26 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | LEAD FREE, PLASTIC, IPAK-3 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 302K |
| 代理商： | IRLU4343PBF |
4
www.irf.com
IRLR/U4343PbF & IRLU4343-701PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-to-Drain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I S
D
,
R
e
v
e
rs
e
D
ra
in
C
u
rr
e
n
t
(A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
I D
,
D
ra
in
-t
o
-S
o
u
rc
e
C
u
rr
e
n
t
(A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
25
50
75
100
125
150
175
TJ , Junction Temperature (°C)
0
5
10
15
20
25
30
I D
,
D
ra
in
C
u
rr
e
n
t
(A
)
-75
-50
-25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
V
G
S
(t
h
)
G
a
te
th
re
s
h
o
ld
V
o
lt
a
g
e
(V
)
ID = 250A
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
rm
a
l
R
e
s
p
o
n
s
e
(
Z
th
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
τi (sec)
1.359
0.00135
0.5409
0.003643
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
C
Ci= i
/Ri
Ci=
τi/Ri
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