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參數(shù)資料
| 型號： | IRLU4343PBF |
| 元件分類： | JFETs |
| 英文描述： | 26 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | LEAD FREE, PLASTIC, IPAK-3 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 302K |
| 代理商： | IRLU4343PBF |
2
www.irf.com
IRLR/U4343PbF & IRLU4343-701PbF
S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
55
–––
V
ΒV
DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
15
–––
mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
42
50
m
–––
57
65
VGS(th)
Gate Threshold Voltage
1.0
–––
V
GS(th)/TJ
Gate Threshold Voltage Coefficient
–––
-4.4
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
2.0
A
–––
25
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
gfs
Forward Transconductance
8.8
–––
S
Qg
Total Gate Charge
–––
28
42
Qgs
Pre-Vth Gate-to-Source Charge
–––
3.5
–––
VGS = 10V
Qgd
Gate-to-Drain Charge
–––
9.5
–––
ID = 19A
Qgodr
Gate Charge Overdrive
–––
15
–––
See Fig. 6 and 19
td(on)
Turn-On Delay Time
–––
5.7
–––
tr
Rise Time
–––
19
–––
td(off)
Turn-Off Delay Time
–––
23
–––
ns
tf
Fall Time
–––
5.3
–––
Ciss
Input Capacitance
–––
740
–––
Coss
Output Capacitance
–––
150
–––
pF
Crss
Reverse Transfer Capacitance
–––
59
–––
Coss
Effective Output Capacitance
–––
250
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
i
A
EAR
Repetitive Avalanche Energy
i
mJ
Diode Characteristics
Parameter
Min.
Typ. Max. Units
IS @ TC = 25°C Continuous Source Current
–––
26
(Body Diode)
A
ISM
Pulsed Source Current
–––
80
(Body Diode)
VSD
Diode Forward Voltage
–––
1.2
V
trr
Reverse Recovery Time
–––
52
78
ns
Qrr
Reverse Recovery Charge
–––
100
150
nC
VDS = 25V, ID = 19A
VDS = 44V
VDD = 28V, VGS = 10V
e
integral reverse
= 1.0MHz,
See Fig.5
ID = 19A
RG = 2.5
VGS = 0V, VDS = 0V to -44V
MOSFET symbol
showing the
See Fig. 14, 15, 17a, 17b
Typ.
–––
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 4.7A e
TJ = 25°C, IS = 19A, VGS = 0V e
TJ = 25°C, IF = 19A
di/dt = 100A/s
e
VGS = 0V
Conditions
p-n junction diode.
VDS = 50V
and center of die contact
f
Max.
160
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 4.5V, ID = 3.8A
e
VDS = VGS, ID = 250A
VDS = 55V, VGS = 0V
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