參數(shù)資料
型號(hào)： IRLU3103
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 30V的，的Rds（on）\u003d 0.019ohm，身份證\u003d 46A條）
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 164K
代理商： IRLU3103
IRLR/U3103
Parameter
Min. Typ. Max. Units
30
–––
–––
0.037 –––
–––
––– 0.019
–––
––– 0.024
1.0
–––
23
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.0
–––
210
–––
20
–––
54
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 28A
V
GS
= 4.5V, I
D
= 23A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 34A
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
I
D
= 34A
V
DS
= 24V
V
GS
= 4.5V, See Fig. 6 and 13
V
DD
= 15V
I
D
= 34A
R
G
= 3.4
,
V
GS
= 4.5V
R
D
= 0.43
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
25
250
100
-100
50
14
28
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
Source-Drain Ratings and Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1600 –––
640
320
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nA
S
D
G
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
L
D
Internal Drain Inductance
–––
4.5
–––
L
S
Internal Source Inductance
–––
7.5
–––
ns
μA
nH
Caculated continuous current based on maximum allowable junction temperature;
Package limitation current = 20A.
This is applied for I-PAK, L
S
of D-PAK is measured between lead and center of
die contact
Uses IRL3103 data and test conditions.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 15V, starting T
J
= 25°C, L = 300μH
R
G
= 25
, I
AS
= 34A. (See Figure 12)
I
SD
≤
34A, di/dt
≤
140A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 28A, V
GS
= 0V
T
J
= 25°C, I
F
= 34A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
I
SM
V
SD
t
rr
Q
rr
t
on
Specification changes
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
81
210
1.3
120
310
V
ns
nC
A
–––
––– 220
–––
–––
46
S
D
G
Rev. #
Parameters Old spec.
V
GS(th)
(Max.)
V
GS
(Max.)
New spec.
No spec.
±16
Comments
Revision Date
5/1/96
5/1/96
1
1
2.5V
±20
Removed V
GS(th)
Max. Specification
Decrease V
GS
Max. Specification
Notes:
相關(guān)PDF資料
PDF描述
IRLU9343-701 DIODE MED-FAST BAS116 80VR 250MA 1.25VF@150MA 1.5US TO-236AB -55+150C
IRLR9343 DIGITAL AUDIO MOSFET
IRLU9343 DIGITAL AUDIO MOSFET
IRLZ24N HEXFET POWER MOSFET
IRLZ24S HEXFET POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLU3103PBF 功能描述:MOSFET MOSFT 30V 46A 19mOhm 33.3nC LogLvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLU3105 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE MOSFET
IRLU3105PBF 制造商:International Rectifier 功能描述:MOSFET, 55V, 25A, 37 MOHM, 13.3 NC QG, LOGIC LEVEL, I-PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 25A 3PIN IPAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N 55V 25A I-PAK 制造商:International Rectifier 功能描述:MOSFET, N, 55V, 25A, I-PAK 制造商:International Rectifier 功能描述:MOSFET, N, 55V, 25A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:55V; On Resistance Rds(on):37mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation ;RoHS Compliant: Yes
IRLU3110ZPBF 功能描述:MOSFET MOSFT 100V 63A 14mOhm 34nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLU3114ZPBF 功能描述:MOSFET MOSFT 40V 130A 4.9mOhm 40nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*