參數(shù)資料
型號(hào)： IRLU3103
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 30V的，的Rds（on）\u003d 0.019ohm，身份證\u003d 46A條）
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 164K
代理商： IRLU3103
HEXFET
Power MOSFET
IRLR/U3103
PD - 9.1333B
l
Logic-Level Gate Drive
l
Ultra Low On-Resistance
l
Surface Mount (IRLR3103)
l
Straight Lead (IRLU3103)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
8/7/96
V
DSS
= 30V
R
DS(on)
= 0.019
I
D
= 46A
S
D
G
D-PA K
TO-252A A
I-PAK
TO-251AA
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
Description
PRELIMINARY
Parameter
Max.
46
29
220
69
0.56
±16
240
34
6.9
2.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
°C
300 (1.6mm from case)
Parameter
Min.
––––
––––
––––
Typ.
––––
––––
––––
Max.
1.8
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
°C/W
Thermal Resistance
相關(guān)PDF資料
PDF描述
IRLU9343-701 DIODE MED-FAST BAS116 80VR 250MA 1.25VF@150MA 1.5US TO-236AB -55+150C
IRLR9343 DIGITAL AUDIO MOSFET
IRLU9343 DIGITAL AUDIO MOSFET
IRLZ24N HEXFET POWER MOSFET
IRLZ24S HEXFET POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLU3103PBF 功能描述:MOSFET MOSFT 30V 46A 19mOhm 33.3nC LogLvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLU3105 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE MOSFET
IRLU3105PBF 制造商:International Rectifier 功能描述:MOSFET, 55V, 25A, 37 MOHM, 13.3 NC QG, LOGIC LEVEL, I-PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 25A 3PIN IPAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N 55V 25A I-PAK 制造商:International Rectifier 功能描述:MOSFET, N, 55V, 25A, I-PAK 制造商:International Rectifier 功能描述:MOSFET, N, 55V, 25A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:55V; On Resistance Rds(on):37mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation ;RoHS Compliant: Yes
IRLU3110ZPBF 功能描述:MOSFET MOSFT 100V 63A 14mOhm 34nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLU3114ZPBF 功能描述:MOSFET MOSFT 40V 130A 4.9mOhm 40nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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