參數(shù)資料
型號(hào)： IRLR3410PBF
廠商： International Rectifier
英文描述： Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status:   Remarks:  
中文描述： ㈢的HEXFET功率MOSFET
文件頁(yè)數(shù)： 1/11頁(yè)
文件大?。?/td> 294K
代理商： IRLR3410PBF
IRLR/U3410PbF
HEXFET
Power MOSFET
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.105
I
D
= 17A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
Parameter
Max.
17
12
60
79
0.53
± 16
150
9.0
7.9
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
°C/W
Thermal Resistance
D-PAK
TO-252AA
I-PAK
TO-251AA
Logic Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR3410)
Straight Lead (IRLU3410)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 95087A
1
相關(guān)PDF資料
PDF描述
IRLU3410PbF Asynchronous SRAM; Organization (word): 512K; Organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (36); Status:   Remarks:  
IRLR3705ZPBF AUTOMOTIVE MOSFET HEXFET Power MOSFET
IRLU3705ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET
IRLR3715PBF SMPS MOSFET
IRLU3715PBF SMPS MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLR3410TR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) DPAK T/R
IRLR3410TRL 功能描述:MOSFET N-CH 100V 17A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRLR3410TRLPBF 功能描述:MOSFET MOSFT 100V 15A 105mOhm 22.7nC LogLv RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLR3410TRPBF 功能描述:MOSFET 100V 1 N-CH HEXFET 105mOhms 22.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLR3410TRPBF-CUT TAPE 制造商:IR 功能描述:Single N-Channel 100 V 79 W 34 nC Hexfet Power Mosfet Surface Mount - TO-252AA
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