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參數(shù)資料
型號(hào): IRLI620GPBF
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁(yè)數(shù): 8/8頁(yè)
文件大?。?/td> 1422K
代理商: IRLI620GPBF
8
www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
08/04
TO-220 Full-Pak Part Marking Information
WITH AS S E MBLY
LOT C ODE 3432
AS S E MBLE D ON WW 24 1999
IN THE AS S E MBLY LINE "K"
E XAMPLE :
THIS IS AN IRF I840G
PART NUMBE R
LOT C ODE
AS S E MBLY
INTE RNATIONAL
RE C TIF IE R
LOGO
34 32
924K
IRFI840G
DATE C ODE
YEAR 9 = 1999
WE E K 24
LINE K
Note:
"P" in assembly line
position indicates "Lead-Free"
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
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參數(shù)描述
IRLI630 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET
IRLI630A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET
IRLI630ATU 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLI630G 功能描述:MOSFET N-Chan 200V 6.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLI630GPBF 功能描述:MOSFET N-Chan 200V 6.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube