參數(shù)資料
型號(hào)： IRLI3803
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 103K
代理商： IRLI3803
IRLI3803
ns
Parameter
Min. Typ. Max. Units
30
–––
–––
0.052 –––
–––
––– 0.006
–––
––– 0.009
1.0
–––
55
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
–––
230
–––
29
–––
35
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 40A
V
GS
= 4.5V, I
D
= 34A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 71A
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
= 71A
V
DS
= 24V
V
GS
= 4.5V, See Fig. 6 and 13
V
DD
= 15V
I
D
= 71A
R
G
= 1.3
,
V
GS
= 4.5V
R
D
= 0.20
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
= 1.0MHz
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
25
250
100
-100
140
41
78
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
C
Source-Drain Ratings and Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
5000 –––
1800 –––
880
12
pF
–––
–––
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 40A, V
GS
= 0V
T
J
= 25°C, I
F
= 71A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
120
450
1.3
180
680
V
ns
nC
–––
–––
470
nA
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
I
GSS
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
S
D
G
μA
nH
A
–––
–––
76
S
D
G
V
DD
= 15V, starting T
J
= 25°C, L = 180μH
R
G
= 25
, I
AS
= 71A. (See Figure 12)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
71A, di/dt
≤
130A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
t=60s, =60Hz
Uses IRL3803 data and test conditions
L
D
Internal Drain Inductance
–––
4.5
–––
L
S
Internal Source Inductance
–––
7.5
–––
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