參數(shù)資料
型號: IRL2203NS
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 30V的,的Rds(on)\u003d 7.0mohm,身份證\u003d 116A)
文件頁數(shù): 7/8頁
文件大?。?/td> 221K
代理商: IRL2203NS
IRL2203N
www.irf.com
7
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
[ ] ***
V
DD
[ ]
I
[ ]
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
R
G
V
DD
dv/dt controlled by R
G
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
*
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
Reverse Polarity of D.U.T for P-Channel
V
GS
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
Fig 14.
For N-channel
HEXFET
power MOSFETs
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