參數(shù)資料
型號(hào): IRL2203NS
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 30V的,的Rds(on)\u003d 7.0mohm,身份證\u003d 116A)
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 221K
代理商: IRL2203NS
IRL2203N
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
20
40
60
80
0
3
6
9
12
15
Q , Total Gate Charge (nC)
V
G
I =
SEE FIGURE
FOR TEST CIRCUIT
13
60A
V
= 15V
DS
V
= 24V
DS
0.1
1
10
100
1000
0.0
0.4
V ,Source-to-Drain Voltage (V)
0.8
1.2
1.6
2.0
2.4
I
S
V = 0 V
T = 25 C
T = 175 C
°
1
10
100
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
ID
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
1
10
100
0
1000
2000
3000
4000
5000
6000
V , Drain-to-Source Voltage (V)
C
C
V
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
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