- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384504 > IRHNJ9130 (International Rectifier) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PDF資料下載
參數(shù)資料
| 型號(hào)： | IRHNJ9130 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 0.5） |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 126K |
| 代理商： | IRHNJ9130 |
www.irf.com
3
Radiation Characteristics
IRHNJ9130
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -100 — -100 — V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
- 2.0 - 4.0 -2.0 -5.0
I
GSS
Gate-to-Source Leakage Forward
— -100 — -100 nA
I
GSS
Gate-to-Source Leakage Reverse
— 100 — 100
I
DSS
Zero Gate Voltage Drain Current
— -25 — -25 μA V
DS
=-80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.3 — 0.3
V
GS
= -12V, I
D
=-7.0A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.29 — 0.29
V
GS
= -12V, I
D
=-7.0A
On-State Resistance (SMD-0.5)
V
SD
Diode Forward Voltage
— -3.0 — -3.0 V V
GS
= 0V, IS = -11A
100K Rads(Si)
1
300K Rads (Si)
2
Units
Test Conditions
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHNJ9130
2. Part number IRHNJ93130
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
-120
-100
-80
-60
-40
-20
0
0
5
10
15
20
VGS
V
Cu
Br
I
Table 2. Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
28
285 32.6 -100 -100 -100 -70 -60
Br
36.8
305 39 -100 -100 -70 -50 -40
I
59.8
343 43 -60
—
—
—
LET
Energy Range
VDS (V)
—
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHNJ93130 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRHQ3110 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
| IRHQ4110 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
| IRHQ7110 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
| IRHQ8110 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHNJ9130SCS | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 11A 3SMD-0.5 - Rail/Tube |
| IRHNJ9130SCV | 制造商:International Rectifier 功能描述:100V 8.000A HEXFET RADHARD - Bulk |
| IRHNJ9230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNJ93130 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNJ93130SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。