- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384503 > IRHM57260SE (International Rectifier) RADIATION HARDENED POWER MOSFET THRU-HOLE PDF資料下載
參數(shù)資料
| 型號(hào)： | IRHM57260SE |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| 中文描述： | 抗輻射功率MOSFET的通孔 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 116K |
| 代理商： | IRHM57260SE |
IRHM57260
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L= 0.82 mH
Peak IL = 35A, VGS = 12V
ISD
≤
35A, di/dt
≤
410A/
μ
s,
VDD
≤
200V, TJ
≤
150°C
Footnotes:
Case Outline and Dimensions — TO-254AA
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
CAUTION
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 01/03
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
4. CONFORMS TO J EDEC OUTLINE TO-254AA.
1 = DRAIN
2 = SOURCE
3 = GATE
PIN ASSIGNMENTS
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
0.12 [.005]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.81 [.150]
2X
17.40 [.685]
16.89 [.665]
A
1.14 [.045]
0.89 [.035]
0.36 [.014]
B A
3X
B
20.32 [.800]
20.07 [.790]
3.78 [.149]
3.53 [.139]
1
2
3
17.40 [.685]
16.89 [.665]
3.81 [.150]
0.84 [.033]
MAX.
C
PIN ASSIGNMENTS
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
0.12 [.005]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.81 [.150]
2X
22.73 [.895]
21.21 [.835]
17.40 [.685]
16.89 [.665]
A
1.14 [.045]
0.36 [.014]
B
A
3X
4.06 [.160]
3.56 [.140]
B
R 1.52 [.060]
1
2
3
4.82 [.190]
3.81 [.150]
20.32 [.800]
20.07 [.790]
3.78 [.149]
3.53 [.139]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHM58260 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHM7064 | TRANSISTOR N-CHANNEL |
| IRHM8064 | TRANSISTOR N-CHANNEL |
| IRHM7264SE | TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.087ohm, Id=35A*) |
| IRHM7360 | REPETITIVE AVALANCHE AND dv/dt RATED |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHM57260SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM57260SESCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM57264SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHM57264SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM57264SESCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。