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參數(shù)資料
| 型號： | IRHM7264SE |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.087ohm, Id=35A*) |
| 中文描述： | 晶體管N溝道（BVdss \u003d 250V，的Rds（on）\u003d 0.087ohm，身份證\u003d 35A條*） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 121K |
| 代理商： | IRHM7264SE |
Product Summary
Part Number
IRHM726SE
BV
DSS
250V
R
DS(on)
0.087
I
D
35A*
Features:
Radiation Hardened up to 1 x 10
5
Rads (Si)
I
Single Event Burnout (SEB) Hardened
I
Single Event Gate Rupture (SEGR) Hardened
I
Gamma Dot (Flash X-Ray) Hardened
I
Neutron Tolerant
I
Identical Pre- and Post-Electrical Test Conditions
I
Repetitive Avalanche Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
I
Electrically Isolated
I
Ceramic Eyelets
I
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
IRHM7264SE
35*
22.8
140
250
2.0
±20
500
35*
25
4.0
-55 to 150
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (0.063 in. (1.6mm) from
case for 10 sec.)
9.3 (typical)
Weight
g
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
Provisional Data Sheet No. PD-9.1393A
250 Volt, 0.087
, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under
identical
pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
IRHM7264SE
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
o
C
A
Notes: See Page 4.
*
ID current limited by pin diameter
Next Data Sheet
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHM7264SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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| IRHM7360D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 22A I(D) | TO-254VAR |
| IRHM7360SE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM7360SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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