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參數(shù)資料
| 型號(hào)： | IRHM4160 |
| 廠商： | International Rectifier |
| 英文描述： | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
| 中文描述： | 重復(fù)性雪崩和DV /受好評(píng)的HEXFET晶體管胸苷 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 266K |
| 代理商： | IRHM4160 |
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Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
1
10
100
1000
1
10
100
T = 25 C
20μs PULSE WIDTH
BOTTOM
TOP
VGS
12V
V , Drain-to-Source Voltage (V)
I
D
5.0V
10
100
1000
1
10
100
T = 150 C
20μs PULSE WIDTH
BOTTOM
TOP
VGS
12V
V , Drain-to-Source Voltage (V)
I
D
5.0V
1
10
100
1000
5
6
V , Gate-to-Source Voltage (V)
7
8
9
10
11
12
20μs PULSE WIDTH
V = 50V
DS
I
D
T = 25 C
°
T = 150 C
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R
(
D
I =
50A
V
=
GS
12V
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