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參數(shù)資料
| 型號(hào)： | IRHM3250 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（對(duì)254AA） |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 271K |
| 代理商： | IRHM3250 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
26
16
104
150
1.2
±20
500
26
15
5.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (Typical)
g
PD - 90674C
Pre-Irradiation
International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
JANSR2N7269
200V, N-CHANNEL
REF: MIL-PRF-19500/603
10/11/00
www.irf.com
1
RAD Hard
HEXFET
TECHNOLOGY
Product Summary
Part Number Radiation Level R
DS(on)
IRHM7250 100K Rads (Si)
IRHM3250 300K Rads (Si)
IRHM4250 600K Rads (Si)
IRHM8250 1000K Rads (Si)
I
D
QPL Part Number
JANSR2N7269
JANSF2N7269
JANSG2N7269
JANSH2N7269
0.10
0.10
0.10
0.10
26A
26A
26A
26A
Features:
n
Single Event Effect (SEE) Hardened
n
Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Eyelets
n
Light Weight
For footnotes refer to the last page
IRHM7250
TO-254AA
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PDF描述 |
|---|---|
| IRHM4250 | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| IRHM7250 | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| IRHM8250 | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| IRHM3260 | RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA) |
| IRHM4260 | RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHM3260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM3450 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM3Z60 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| IRHM4054 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM4064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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