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參數(shù)資料
| 型號： | IRHM3250 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（對254AA） |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 271K |
| 代理商： | IRHM3250 |
www.irf.com
5
Pre-Irradiation
IRHM7250, JANSR2N7269
Fig 6.
Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 5.
Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 8b.
V
DSS
Stress Equals
80% of B
VDSS
During Radiation
Fig 9.
High Dose Rate
(Gamma Dot) Test Circuit
Fig 7.
Typical Transient Response
of Rad Hard HEXFET During
1x10
12
Rad (Si)/Sec Exposure
Fig 8a.
Gate Stress of V
GSS
Equals 12 Volts During
Radiation
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| IRHM7250 | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
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| IRHM3260 | RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA) |
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相關(guān)代理商/技術(shù)參數(shù) |
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| IRHM3260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM3450 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM3Z60 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| IRHM4054 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM4064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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