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參數(shù)資料
| 型號(hào)： | IRHG7214 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| 中文描述： | 抗輻射功率MOSFET的通孔 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 243K |
| 代理商： | IRHG7214 |
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25
50
75
100
125
150
0
50
100
150
200
Starting T , Junction Temperature( C)
E
A
BOTTOM
ID
TOP
0.22A
0.32A
0.5A
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PDF描述 |
|---|---|
| IRHG8214 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHI7360SE | TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=24.3A) |
| IRHI7460SE | TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A) |
| IRHLUB7930Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) |
| IRHLUB7970Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHG8110 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) |
| IRHG8214 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHG9110 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHG9110SCS | 制造商:International Rectifier 功能描述:100V 1.000A HEXFET RADHARD - Rail/Tube |
| IRHG9110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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