- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384502 > IRHI7460SE (International Rectifier) TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A) PDF資料下載
參數(shù)資料
| 型號： | IRHI7460SE |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A) |
| 中文描述： | 晶體管N溝道（BVdss \u003d 500V及的Rds（on）\u003d 0.32ohm，身份證\u003d 20A條） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 131K |
| 代理商： | IRHI7460SE |
Product Summary
Part Number
IRHI7460SE
BV
DSS
500V
R
DS(on)
0.32
I
D
20A
Features:
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
I
Single Event Gate Rupture (SEGR) Hardened
I
Gamma Dot (Flash X-Ray) Hardened
I
Neutron Tolerant
I
Identical Pre- and Post-Electrical Test Conditions
I
Repetitive Avalanche Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
I
Electrically Isolated
I
Ceramic Eyelets
I
I
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
IRHI7460SE
20
12
80
300
2.4
±20
500
20
30
3.5
-55 to 150
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (0.063 in. (1.6mm) from
case for 10 sec.)
10.9 (typical)
Weight
g
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
500 Volt, 0.32
, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under
identical
pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Provisional Data Sheet No. PD-9.1224A
Pre-Radiation
IRHI7460SE
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
o
C
A
Next Data Sheet
Index
Previous Datasheet
To Order
相關PDF資料 |
PDF描述 |
|---|---|
| IRHLUB7930Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) |
| IRHLUB7970Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) |
| IRHM2C50SE | TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) |
| IRHM3130 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHM4130 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRHI7460SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHI7460SESCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IR-HI-REL-LITKIT | 制造商:International Rectifier 功能描述:IR-HI-REL-LIT 10 PNS INVOLVED - Literature |
| IRHLA730Z4 | 制造商:International Rectifier 功能描述:MOSFET, RAD HARD, LOGIC LEVEL, N CHANNEL, COTS - Bulk |
| IRHLA7630Z4 | 制造商:International Rectifier 功能描述:MOSFET, RAD HARD, LOGIC LEVEL, N & P CHANNEL, COTS - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。