參數資料
型號: IRGBC40M-S
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)
中文描述: 絕緣柵雙極晶體管(VCES和\u003d 600V的,@和VGE \u003d 15V的,集成電路\u003d 24A條)
文件頁數: 1/6頁
文件大?。?/td> 248K
代理商: IRGBC40M-S
C-63
Revision 0
IRGBC40F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
0.50
2.0 (0.07)
Max.
0.77
80
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
°C/W
g (oz)
Features
Switching-loss rating includes all "tail" losses
Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
V
CES
= 600V
V
CE(sat)
2.0V
@V
GE
= 15V, I
C
= 27A
E
C
G
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
49
27
200
200
±20
15
160
65
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
mJ
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Thermal Resistance
PD - 9.691A
TO-220AB
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IRGBC40S 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours
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