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參數(shù)資料
| 型號： | IRFZ34NPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 186K |
| 代理商： | IRFZ34NPBF |
2
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Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Parameter
Min. Typ. Max. Units
600
–––
–––
0.30
–––
240
3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 13A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
Drain-to-Source Breakdown Voltage
–––
–––
280
5.0
50
250
100
-100
V
V/°C
m
V
μA
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Diode Characteristics
Symbol
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
Parameter
Min. Typ. Max. Units
11
–––
–––
–––
–––
–––
–––
–––
–––
26
–––
99
–––
48
–––
37
–––
3570 –––
–––
350
–––
36
–––
4710 –––
–––
92
–––
180
Conditions
V
DS
= 50V, I
D
= 13A
I
D
= 22A
V
DS
= 480V
V
GS
= 10V
V
DD
= 300V
I
D
= 22A
R
G
= 6.2
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 480V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 480V
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
150
45
76
–––
–––
–––
–––
S
nC
–––
–––
pF
–––
–––
ns
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 1.5mH, R
G
= 25
,
I
AS
= 22A
I
SD
≤
22A, di/dt
≤
360 A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C.
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
S
D
G
Parameter
Min. Typ. Max. Units
–––
–––
Conditions
22
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 22A, V
GS
= 0V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
–––
–––
88
–––
–––
–––
–––
–––
–––
–––
590
670 1010
7.2
8.5
26
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
1.5
890
V
I
F
= 22A
di/dt = 100A/μs
11
13
39
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
A
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
ns
μC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFZ34NPBF | 制造商:International Rectifier 功能描述:TRANSISTOR ((NW)) |
| IRFZ34NS | 功能描述:MOSFET N-CH 55V 29A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFZ34NSPBF | 功能描述:MOSFET 60V 1 N-CH HEXFET 40mOhms 22.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ34NSTRL | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 29A 3-Pin(2+Tab) D2PAK T/R |
| IRFZ34NSTRLPBF | 功能描述:MOSFET MOSFT 55V 29A 40mOhm 22.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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