參數(shù)資料
型號： IRFP15N60L
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/9頁
文件大?。?/td> 171K
代理商： IRFP15N60L
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting T
J
= 25°C, L = 2.9mH, R
G
= 25
,
I
AS
= 15A, dv/dt = 10V/ns. (See Figure 12a)
I
SD
≤
15A, di/dt
≤
340A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C.
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff.(ER) is a fixed capacitance that stores the same energy
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
Drain-to-Source Leakage Current
Min.
600
–––
–––
3.0
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.39
–––
385
460
–––
5.0
–––
50
–––
2.0
–––
100
–––
-100
0.79
–––
V
V/°C
m
V
μA
mA
nA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
eff.
Effective Output Capacitance
C
oss
eff. (ER)
Effective Output Capacitance
R
G
Min.
8.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
100
–––
30
–––
46
20
–––
44
–––
28
–––
5.5
–––
2720
–––
260
–––
20
–––
120
–––
100
–––
S
nC
ns
pF
(Energy Related)
Avalanche Characteristics
Symbol
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R
θ
JC
Junction-to-Case
R
θ
CS
Case-to-Sink, Flat, Greased Surface
R
θ
JA
Junction-to-Ambient
Parameter
Typ.
–––
–––
–––
Units
mJ
A
mJ
Parameter
Typ.
–––
0.24
–––
Units
°C/W
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 9.0A
f = 1MHz, open drain
Conditions
V
DS
= 50V, I
D
= 9.0A
I
D
= 15A
V
DS
= 480V
V
GS
= 10V, See Fig. 7 & 15
V
DD
= 300V
I
D
= 15A
R
G
= 1.8
V
GS
= 10V, See Fig. 11a & 11b
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V,V
DS
= 0V to 480V
15
28
Max.
320
40
Max.
0.44
–––
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