參數(shù)資料
型號(hào)： IRFL1006TR
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.3A I(D) | SOT-223
中文描述： 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 2.3AI（四）|的SOT - 223
文件頁(yè)數(shù)： 2/9頁(yè)
文件大小： 160K
代理商： IRFL1006TR
IRFL1006
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
1.6A, di/dt
≤
260A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
Starting T
J
= 25°C, L = 42 mH
R
G
= 25
, I
AS
= 1.6A. (See Figure 12)
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.6A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.6A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
31
46
1.3
47
68
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
6.4
1.6
A
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Min. Typ. Max. Units
60
–––
–––
0.057 –––
–––
–––
2.0
–––
3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.4
–––
18
–––
18
–––
17
–––
160
–––
55
–––
19
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 1.6A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 1.6A
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 1.6A
V
DS
= 48V
V
GS
= 10V, See Fig. 6 and 9
V
DD
= 30V
I
D
= 1.6A
R
G
= 49
R
D
= 19
, See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
–––
V
V/°C
V
S
0.22
4.0
–––
25
250
100
-100
8.0
1.7
3.3
–––
–––
–––
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
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