參數(shù)資料
型號： IRFIZ48
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 60V的，的Rds（on）\u003d 0.018ohm，身份證\u003d 37A條）
文件頁數(shù)： 2/8頁
文件大?。?/td> 93K
代理商： IRFIZ48
IRFIZ48V
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 72A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 72A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
70
155
2.0
100
233
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
39
290
A
Starting T
J
= 25
°
C, L = 64μH
R
G
= 25
, I
AS
= 72A. (See Figure 12)
I
SD
≤
72A, di/dt
≤
151A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175
°
C
Pulse width
≤
300μs; duty cycle
≤
2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
Parameter
Min. Typ. Max. Units
60
–––
–––
0.064
–––
–––
–––
2.0
–––
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.6
–––
200
–––
157
–––
166
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 43A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 43A
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 150
°
C
V
GS
= 20V
V
GS
= -20V
I
D
= 72A
V
DS
= 48V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 30V
I
D
= 72A
R
G
= 9.1
R
D
= 0.34
, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/
°
C
m
V
S
12.0
4.0
–––
25
250
100
-100
110
29
36
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1985
–––
496
91
–––
–––
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
E
as
Single Pulse Avalanche Energy
–––
780
170
mJ
I
AS
= 72A, L = 64mH
pF
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175
°
C .
Uses IRFZ48V data and test conditions.
t = 60s, f = 60Hz
相關(guān)PDF資料
PDF描述
IRFIZ48G Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A)
IRFK6H054 ISOLATED BASE POWER HEX-PAK ASSEMBLY PARALLEL CHIP
IRFK6H150 ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION
IRFK6H250 ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION
IRFK6H350 ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFIZ48G 功能描述:MOSFET N-Chan 60V 37 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFIZ48G_09 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET
IRFIZ48GPBF 功能描述:MOSFET N-Chan 60V 37 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFIZ48N 功能描述:MOSFET N-CH 55V 36A TO220FP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRFIZ48NPBF 功能描述:MOSFET MOSFT 55V 36A 16mOhm 59.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*