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參數(shù)資料
| 型號： | IRFIZ48G |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 60V的，的Rds（on）\u003d 0.018ohm，身份證\u003d 37A條） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 93K |
| 代理商： | IRFIZ48G |
IRFIZ48V
HEXFET
Power MOSFET
02/12/01
Parameter
Max.
39
27
290
43
0.29
± 20
72
15
5.3
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
A
mJ
V/ns
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
Max.
3.5
65
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
Thermal Resistance
www.irf.com
1
V
DSS
= 60V
R
DS(on)
= 12m
I
D
= 39A
S
D
G
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
Fullpak is mounted to a heatsink using a single clip or by a
single screw fixing.
Advanced Process Technology
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
Description
TO-220 FULLPAK
PD-94072
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFK6H054 | ISOLATED BASE POWER HEX-PAK ASSEMBLY PARALLEL CHIP |
| IRFK6H150 | ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION |
| IRFK6H250 | ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION |
| IRFK6H350 | ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION |
| IRFK6H450 | Isolated Base Power HEX-pak Assembly-Half Bridge Configuration |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFIZ48G_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| IRFIZ48GPBF | 功能描述:MOSFET N-Chan 60V 37 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFIZ48N | 功能描述:MOSFET N-CH 55V 36A TO220FP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFIZ48NPBF | 功能描述:MOSFET MOSFT 55V 36A 16mOhm 59.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFIZ48NPBF | 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 55V, 36A TO-220FP |
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