- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384495 > IRFG5110 (International Rectifier) 100V, Combination 2N-2P-CHANNEL PDF資料下載
參數(shù)資料
| 型號： | IRFG5110 |
| 廠商： | International Rectifier |
| 英文描述： | 100V, Combination 2N-2P-CHANNEL |
| 中文描述： | 100V的，組合為2n -二路通道 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 394K |
| 代理商： | IRFG5110 |
IRFG5110
2
www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min Typ
—
—
—
—
—
Max Units
1.0
4.0
1.5
200
0.83
Test Conditions
—
—
—
—
—
V
nS
nC
T
j
= 25°C, IS = 1.0A, VGS = 0V
Tj = 25°C, IF = 1.0A, di/dt
≤
100A/
μ
s
VDD
≤
50V
A
Electrical Characteristics
For Each N-Channel Device
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
—
Typ
— —
0.13
—
Max Units
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V/°C
—
—
2.0
0.86
—
—
—
—
— 4.0 V
— —
)
—
25
—
250
0.7
0.8
VGS = 10V, ID = 0.6A
VGS = 10V, ID = 1.0A
VDS = VGS, ID = 250
μ
A
VDS > 15V, IDS = 0.6A
VDS= 80V, VGS= 0V
VDS = 80V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 1.0A,
VDS = 50V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
15
7.5
7.5
20
25
40
40
—
nC
VDD = 50V, ID = 1.0A,
VGS =10V, RG = 24
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
180
82
15
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
μ
A
nH
ns
Thermal Resistance (Per Die)
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
—
Units
Test Conditions
17
90
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFG6110 | POWER MOSFET THRU-HOLE (MO-036AB) |
| IRFG9110 | POWER MOSFET THRU-HOLE (MO-036AB) |
| IRFI4905 | HEXFET Power MOSFET |
| IRFI510G | HEXFET POWER MOSFET |
| IRFI520G | HEXFET POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFG5110SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 100V 1A 14PIN MO-036AB - Bulk |
| IRFG5110SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 100V 1A 14PIN MO-036AB - Bulk |
| IRFG5210 | 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 200V 0.68A 14PIN MO-036AB - Bulk |
| IRFG5210SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 200V 0.68A 14PIN MO-036AB - Bulk |
| IRFG5210SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 200V 0.68A 14PIN MO-036AB - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。