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參數(shù)資料
| 型號(hào)： | IRFG6110 |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET THRU-HOLE (MO-036AB) |
| 中文描述： | 功率MOSFET的通孔（莫- 036AB） |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 402K |
| 代理商： | IRFG6110 |
Absolute Maximum Ratings (Per Die)
Parameter
Continuous Drain Current
N-Channel
1.0
0.6
4.0
1.4
0.011
±20
75
—
—
5.5
P-Channel
-0.75
-0.5
-3.0
1.4
0.011
±20
75
—
—
-5.5
Units
ID @ VGS =± 10V, TC = 25°C
ID @ VGS =± 10V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
o
C
A
04/16/02
www.irf.com
1
Product Summary
Part Number R
DS(on)
I
D
CHANNEL
IRFG6110 0.7
1.0A N
IRFG6110 1.4
-0.75A P
For footnotes refer to the last page
MO-036AB
PD - 90436F
IRFG6110
JANTX2N7336
JANTXV2N7336
REF:MIL-PRF-19500/598
100V, Combination 2N-2P-CHANNEL
HEXFET
MOSFET TECHNOLOGY
POWER MOSFET
THRU-HOLE (MO-036AB)
HEXFET
MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance.
HEXFET
tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
Features:
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
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