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參數(shù)資料
| 型號： | IRFBA1405P |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 5.0mohm，身份證\u003d 174A章） |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 238K |
| 代理商： | IRFBA1405P |
IRFBA1405P
www.irf.com
9
Super-220 Package Outline
LEAD ASSIGNMENTS
MOSFET
2 - DRAIN
3 - SOURCE
1 - GATE
4 - DRAIN
4 - COLLECTOR
3 - EMITTER
2 - COLLECTOR
1 - GATE
IGBT
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.11mH
R
G
= 25
, I
AS
= 101A. (See Figure 12).
I
SD
≤
101A, di/dt
≤
210A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400μs; duty cycle
≤
2%.
Notes:
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.Refer to AN-1001
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 95A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
2X
A
1
2
3
3X
0.25 [.010]
B A
B
4X
4
0.25 [.010]
B A
3.00 [.118]
2.50 [.099]
14.50 [.570]
13.00 [.512]
4.00 [.157]
3.50 [.138]
1.30 [.051]
2.55 [.100]
1.00 [.039]
0.70 [.028]
5.00 [.196]
4.00 [.158]
11.00 [.433]
10.00 [.394]
1.50 [.059]
0.50 [.020]
15.00 [.590]
14.00 [.552]
9.00 [.354]
8.00 [.315]
13.50 [.531]
12.50 [.493]
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO J EDEC OUTLINE TO-273AA.
NOTES:
Data and specifications subject to change without notice.
This product has been designed and qualified for the automotive [Q101]
market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
3/01
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| IRFBA22N50 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=24A) |
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| IRFBA22N50APBF | 功能描述:MOSFET N-Chan 500V 24 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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