參數(shù)資料
型號: IRFBA1405P
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 55V的,的Rds(on)\u003d 5.0mohm,身份證\u003d 174A章)
文件頁數(shù): 6/9頁
文件大?。?/td> 238K
代理商: IRFBA1405P
IRFBA1405P
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
-V
D D
DRIVER
A
15V
20V
Fig 14.
Threshold Voltage Vs. Temperature
-75
-50
-25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
VG
ID = 250μA
25
50
75
100
125
150
175
0
200
400
600
800
1000
1200
Starting T , Junction Temperature ( C)
E
A
BOTTOM
ID
41A
71A
101A
TOP
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