參數(shù)資料
型號： IRFB9N65
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)
中文描述： 功率MOSFET（減振鋼板基本\u003d?650V時(shí)，RDS（on）的最大值\u003d 0.93ohm，身份證\u003d 8.5A）
文件頁數(shù)： 2/8頁
文件大?。?/td> 135K
代理商： IRFB9N65
IRFB9N60A
2
www.irf.com
Parameter
Min. Typ. Max. Units
600
–––
–––
0.66
–––
–––
2.0
–––
5.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
–––
25
–––
30
–––
22
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 5.5A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 5.5A
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, V
GS
= 0V, T
J
= 150°C
V
GS
= 30V
V
GS
= -30V
I
D
= 9.2A
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 300V
I
D
= 9.2A
R
G
= 9.1
R
D
= 35.5
,See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 480V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 480V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
0.75
4.0
–––
25
250
100
-100
49
13
20
–––
–––
–––
–––
V
V/°C
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
1400
180
7.1
1957
49
96
–––
–––
–––
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 6.8mH
R
G
= 25
, I
AS
= 9.2A. (See Figure 12)
I
SD
≤
9.2A, di/dt
≤
50A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 9.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 9.2A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
530
3.0
1.5
800
4.4
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
9.2
37
A
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
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