參數(shù)資料
型號(hào): IRFB61N15D
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 150伏時(shí),RDS(on)的最大值\u003d 0.032ohm,身份證\u003d 50A條)
文件頁數(shù): 1/8頁
文件大?。?/td> 211K
代理商: IRFB61N15D
Notes
through
are on page 8
www.irf.com
1
5/3/01
IRFB61N15D
SMPS MOSFET
HEXFET
Power MOSFET
V
DSS
150V
R
DS(on)
max
0.032
I
D
60A
PD- 94207
Parameter
Max.
60
42
250
2.4
330
2.2
± 30
3.7
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
10 lbfin (1.1Nm)
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
l
High frequency DC-DC converters
l
Motor Control
l
Uninterrutible Power Supplies
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Applications
TO-220AB
Parameter
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
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