參數(shù)資料
型號(hào)： IRFB59N10D
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 100V的，的Rds（on）最大值\u003d 0.025ohm，身份證\u003d 59A條）
文件頁數(shù)： 2/11頁
文件大?。?/td> 138K
代理商： IRFB59N10D
IRFB/IRFS/IRFSL59N10D
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.11 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
2
www.irf.com
Parameter
Min. Typ. Max. Units
18
–––
–––
76
–––
24
–––
36
–––
16
–––
90
–––
20
–––
12
–––
2450 –––
–––
740
–––
190
–––
3370 –––
–––
390
–––
690
Conditions
V
DS
= 50V, I
D
= 35.4A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Avalanche Characteristics
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
114 I
D
= 35.4A
36
nC
54
–––
–––
–––
–––
S
V
DS
= 80V
V
GS
= 10V,
V
DD
= 50V
I
D
= 35.4A
R
G
= 2.5
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 80V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
–––
–––
pF
–––
–––
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
–––
Max.
510
35.4
20
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Thermal Resistance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 35.4A, V
GS
= 0V
T
J
= 25°C, I
F
= 35.4A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
130
0.75
1.3
200
1.1
V
ns
μC
Diode Characteristics
59
236
A
Min. Typ. Max. Units
100
–––
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
–––
3.0
–––
–––
–––
–––
––– 0.025
–––
–––
–––
–––
–––
V
V
GS
= 10V, I
D
= 35.4A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 30V
V
GS
= -30V
5.5
25
250
100
-100
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.75
–––
62
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
°C/W
相關(guān)PDF資料
PDF描述
IRFS59N10D Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A)
IRFSL59N10D Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A)
IRFB61N15D Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)
IRFB9N60 30V N-Channel PowerTrench MOSFET
IRFB9N60A 30V N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFB59N10DHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB
IRFB59N10DPBF 功能描述:MOSFET MOSFT 100V 59A 25mOhm 76nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFB61N15D 制造商:International Rectifier 功能描述:60 A, 150 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFB61N15DHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 150V 60A 3-Pin(3+Tab) TO-220AB
IRFB61N15DPBF 功能描述:MOSFET 150V 1 N-CH HEXFET 32mOhms 95nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*