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參數(shù)資料
| 型號(hào)： | IRFAF30 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) |
| 中文描述： | 的HEXFET三極管通孔（TO-204AA/AE） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 156K |
| 代理商： | IRFAF30 |
IRFAF30
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthJA
Junction to Case
Junction to Ambient
—
—
—
— 30
1.67
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
—
—
—
—
2.8
8.0
VSD
trr
QRR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.8
730
3.0
V
nS
μC
T
j
= 25°C, IS =2.0A, VGS = 0V
Tj = 25°C, IF =2.0A, di/dt
≤
100A/
μ
s
VDD
≤
50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
900
—
Typ
—
1.2
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
2.0
2.3
—
—
—
— 4.6
VGS = 10V, ID =2.0A
— 4.0 V VDS = VGS, ID =250μA
—
—
S (
)
—
25
—
250
μ
A
4.0 VGS = 10V, ID =1.7A
VGS(th)
gfs
IDSS
VDS > 15V, IDS =1.7A
VDS=720V ,VGS=0V
VDS =720V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS= 10V, ID = 2.0A
VDS = 450V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
29
3.2
16
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
66
7.2
37
21
30
140
47
—
nC
VDD =400V*, ID =2.0A,
RG =7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1000
200
98
VGS = 0V, VDS = 25V
f = 1.0MHz
—
—
pF
nA
nH
n s
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
* Equipment Limitation
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