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參數資料
| 型號： | IRF9640 |
| 廠商： | International Rectifier |
| 英文描述： | CAP CERAMIC 5.1PF 50V C0G 0402 |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d-為200V，的Rds（on）\u003d 0.50ohm，身份證\u003d- 11A條） |
| 文件頁數： | 4/7頁 |
| 文件大?。?/td> | 63K |
| 代理商： | IRF9640 |
4-36
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE:
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
Heating effect of 5
μ
s pulse is minimal.
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-10
I
D
,
-100
-100
-1
100
μ
s
10
μ
s
DC
1ms
10ms
100ms
-10
-1
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
-0.1
-1000
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
I
D
,
0
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-20
-30
-40
-10
-20
-30
-40
-50
-50
V
GS
= -11V
V
GS
= -10V
V
GS
= -9V
V
GS
= -8V
V
GS
= -7V
V
GS
= -6V
V
GS
= -5V
V
GS
= -4V
0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-4
0
-2
-4
-6
-10
-8
-12
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-16
-8
-20
V
GS
= -6V
V
GS
= -7V
V
GS
= -8V
V
GS
= -5V
V
GS
= -4V
V
GS
= -10V
V
GS
= -9V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0
-4
-6
-8
-10
-2
-0.1
-1.0
-10
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
100
125
o
C
25
o
C
-55
o
C
V
DS
≥
I
D(ON)
x r
DS(ON)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0.3
0.6
0.7
-15
-30
-45
-60
r
D
,
I
D
, DRAIN CURRENT (A)
-75
0.8
0
0.2
0.4
0.5
V
GS
= -10V
V
GS
= -20V
5
μ
s PULSE TEST
O
)
N
2.5
1.5
1.0
0.5
0.0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
160
2.0
80
V
GS
= -10V, I
D
= -6A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
IRF9640, RF1S9640SM
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相關代理商/技術參數 |
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| IRF9640_R4941 | 功能描述:MOSFET TO-220AB P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9640L | 功能描述:MOSFET P-CH 200V 11A TO-262 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF9640LPBF | 功能描述:MOSFET P-Chan 200V 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9640PBF | 功能描述:MOSFET P-Chan 200V 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9640PBF | 制造商:International Rectifier 功能描述:MOSFET |
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