參數(shù)資料
型號(hào)： IRF9530
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 100V, 0.300 Ohm,P溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/7頁
文件大?。?/td> 63K
代理商： IRF9530
4-10
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF9530,
RF1S9530SM
-100
-100
-12
-7.5
-48
±
20
75
0.6
500
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to T
J
= 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
MIN
-100
-2
-
-
-12
TYP
-
-
-
-
-
MAX
-
-4
-25
-250
-
UNITS
V
V
μ
A
μ
A
A
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
D
= -250
μ
A, V
GS
= 0V, (Figure 10)
V
GS
= V
DS
, I
D
= -250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= -10V,
(Figure 7)
V
GS
=
±
20V
I
D
= -6.5A, V
GS
= -10V, (Figures 8, 9)
V
DS
> I
D(ON)
x r
DS(ON)
Max, I
D
= -6.5A
(Figure 12)
V
DD
= 50V, I
D
≈
-12A, R
G
= 50
,
V
GS
= 10V
R
L
=
4.2
,
(Figures 17, 18)
MOSFET Switching Times are Essentially Inde-
pendent of Operating Temperature
On-State Drain Current (Note 2)
I
D(ON)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
I
GSS
r
DS(ON)
g
fs
-
-
2
-
±
100
0.300
-
nA
S
0.250
3.8
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain (“Miller”) Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
t
d(ON)
t
r
t
d(off)
t
f
Q
g(TOT)
-
-
-
-
-
30
70
70
70
25
60
140
140
140
45
ns
ns
ns
ns
nC
V
GS
=-10V,I
D
=-12A,V
DSS
=0.8xRatedBV
DSS,
(Figure 14, 19, 20) Gate Charge
is Essentially Independent of Operating
Temperature
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
-
-
-
-
-
13
12
500
300
100
3.5
-
-
-
-
-
-
nC
nC
pF
pF
pF
nH
V
DS
= -25V, V
GS
= 0V, f = 1MHz, (Figure 11)
Measured From the
ContactScrewOnTab To
Center of Die
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
Measured From The
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
4.5
-
nH
Internal Source Inductance
L
S
-
7.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θ
JC
R
θ
JA
-
-
-
-
1.67
62.5
o
C/W
o
C/W
Typical Socket Mount
L
S
L
D
G
D
S
IRF9530, RF1S9530SM
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