參數(shù)資料
型號(hào): IRF9410
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
中文描述: 功率MOSFET(減振鋼板基本\u003d 30V的,的Rds(on)\u003d 0.030ohm)
文件頁數(shù): 7/7頁
文件大小: 114K
代理商: IRF9410
IRF9410
SO8
Dimensions are shown in millimeters (inches)
Tape & Reel Information
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
NOT ES :
1. CON TR OLLING DIM ENSION : MILLIMETER.
2. OUT LIN E CON FOR M S TO EIA-481 & EIA-541.
FEED DIR ECTIO N
TERM INAL NU M BER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CO NTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHO W N IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
9/97
相關(guān)PDF資料
PDF描述
IRF9956 Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)
IRFAF30 HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
IRFAG30 HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
IRFB18N50K Power MOSFET(Vdss=500V, Rds(on)max=0.26ohm, Id=27A)
IRFB20N50K SMPS MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF9410PBF 功能描述:MOSFET 30V 1 N-CH HEXFET 30mOhms 18nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF9410TR 功能描述:MOSFET N-CH 30V 7A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF9410TRHR 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 7A 8SOIC - Tape and Reel
IRF9410TRPBF 功能描述:MOSFET MOSFT 30V 7A 30mOhm 18nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF949TE6700 制造商:Infineon Technologies AG 功能描述: