參數(shù)資料
型號： IRF8010
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/8頁
文件大?。?/td> 494K
代理商： IRF8010
IRF8010
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
Drain-to-Source Leakage Current
2
www.irf.com
S
D
G
Min.
100
–––
–––
2.0
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.11
–––
12
15
–––
4.0
–––
20
–––
250
–––
200
–––
-200
V
V/°C
m
V
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
C
oss
eff.
Effective Output Capacitance
Avalanche Characteristics
Parameter
E
AS
Single Pulse Avalanche Energy
dh
I
AR
Avalanche Current
c
E
AR
Repetitive Avalanche Energy
c
Diode Characteristics
Parameter
I
S
Continuous Source Current
Min.
82
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
81
120
22
–––
26
–––
15
–––
130
–––
61
–––
120
–––
3830
–––
480
–––
59
–––
3830
–––
280
–––
530
–––
V
nC
ns
pF
Units
mJ
A
mJ
Min.
–––
Typ. Max. Units
–––
80
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
320
(Body Diode)
ch
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
99
460
1.3
150
700
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typ.
–––
–––
–––
Conditions
V
DS
= 25V, I
D
= 45A
I
D
= 80A
V
DS
= 80V
V
GS
= 10V
f
V
DD
= 50V
I
D
= 80A
R
G
= 39
Conditions
26
V
GS
= 10V
f
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 80V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
e
310
45
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 80A, V
GS
= 0V
f
T
J
= 150°C, I
F
= 80A, V
DD
= 50V
di/dt = 100A/μs
f
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 45A
f
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Max.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF8010HR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 80A 3PIN TO-220AB - Rail/Tube 制造商:International Rectifier 功能描述:TRANSISTORS MOSFET N-CH 100V 80A 3PIN TO-220AB
IRF8010L 制造商:IRF 制造商全稱:International Rectifier 功能描述:SMPS MOSFET
IRF8010LPBF 制造商:International Rectifier 功能描述:MOSFET, 100V, 80A, 15 MOHM, 81 NC QG, TO-262 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 80A 3PIN TO-262 - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N 100V TO-262 制造商:International Rectifier 功能描述:MOSFET, N, 100V, TO-262 制造商:International Rectifier 功能描述:MOSFET, N, 100V, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation ;RoHS Compliant: Yes 制造商:International Rectifier 功能描述:MOSFET, N, 100V, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation ;RoHS Compliant: Yes 制造商:International Rectifier 功能描述:MOSFET N-Channel 100V 80A TO262 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262
IRF8010PBF 功能描述:MOSFET MOSFT 100V 80A 15mOhm 81nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF8010S 制造商:IRF 制造商全稱:International Rectifier 功能描述:SMPS MOSFET
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